FDC638P P-Channel MOSFET by onsemi - High-Performance 20V 4.5A MOSFET 2024-09-23 The FDC638P is a high-performance P-Channel MOSFET by onsemi, featuring 20V drain-to-source voltage, 4.5A current, and ultra-low on-resistance. Ideal for power management, load switches, and motor control applications.
FPF2193: High-Performance Power Switch IC by onsemi | Features & Applications 2024-10-21 Discover the FPF2193 power switch IC by onsemi a high-efficiency, compact solution with 1.5A output, 55mOhm Rds(on), and advanced fault protection. Ideal for IoT, industrial, and battery-powered devices.
CSD17483F4: High-Performance N-Channel MOSFET by Texas Instruments - Features, Specs & Applications 2024-10-28 Explore the CSD17483F4 N-Channel MOSFET by Texas Instruments - a 30V, 1.5A MOSFET with ultra-low Rds On (240mOhm) in a compact 3-PICOSTAR package. Ideal for power management, motor control & automotive applications.
IRG4BC30KDPBF IGBT: High-Performance 600V 28A Power Transistor by Infineon 2024-11-10 Discover the IRG4BC30KDPBF IGBT from Infineon Technologies - a 600V, 28A high-performance power transistor with fast switching (60ns/160ns) and low Vce(on) for motor drives, inverters, and industrial applications. TO-220AB package.
NLV27WZ00USG: High-Performance Dual-Channel NAND Gate IC by onsemi | Features & Applications 2024-12-03 Explore the NLV27WZ00USG, a high-performance dual-channel NAND gate IC by onsemi. Features wide voltage range (1.65V-5.5V), ultra-low power consumption, and industrial-grade reliability. Ideal for consumer electronics, automotive, and IoT applications.
MA4L401-134 High-Performance PIN Diode for RF Applications | MACOM Technology Solutions 2024-12-04 Discover the MA4L401-134 PIN Diode by MACOM, designed for high-performance RF applications. Features low capacitance (0.3pF), high power handling (10W), and thermal stability up to 175 C. Ideal for RF switches, attenuators, and modulators.
