1517-110M
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 70V 1.65GHZ 55AW-1
$0.00
Available to order
Reference Price (USD)
10+
$397.95900
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance 1517-110M RF Bipolar Transistors from Microsemi Corporation, designed for superior signal amplification in demanding applications. These transistors feature excellent high-frequency response, low noise, and reliable performance, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless devices, our BJT-RF transistors ensure stable operation under varying conditions. Contact us today for pricing and availability let our experts help you find the perfect solution for your RF needs!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 70V
- Frequency - Transition: 1.48GHz ~ 1.65GHz
- Noise Figure (dB Typ @ f): -
- Gain: 7.3dB ~ 8.6dB
- Power - Max: 350W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
- Current - Collector (Ic) (Max): 9A
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: 55AW-1
- Supplier Device Package: 55AW-1
Related Products
Microsemi Corporation
68234Z
Infineon Technologies
BFS 360L6 E6327
Microsemi Corporation
80279H
Microsemi Corporation
64020H
Microsemi Corporation
10A015
Infineon Technologies
BFP182RE7764
CEL
NESG2107M33-A
Infineon Technologies
BFR92PE6530
Infineon Technologies
BFS 466L6 E6327
Toshiba Semiconductor and Storage