NESG2107M33-A
CEL
CEL
RF TRANS NPN 5V 10GHZ 3SMINMOLD
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Achieve peak RF performance with NESG2107M33-A transistors by CEL. These BJT components combine high breakdown voltage with superior thermal management, catering to power amplifier stages and frequency multipliers. Trusted in defense and commercial sectors alike. Take the next step inquire about customization options and lead times!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5V
- Frequency - Transition: 10GHz
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.5dB @ 2GHz
- Gain: 7dB ~ 10dB
- Power - Max: 130mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 5mA, 1V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Flat Lead
- Supplier Device Package: 3-SuperMiniMold (M33)
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