1HN04CH-TL-W
onsemi
onsemi
MOSFET N-CH 100V 270MA 3CPH
$0.60
Available to order
Reference Price (USD)
3,000+
$0.24699
6,000+
$0.23186
15,000+
$0.21672
30,000+
$0.20612
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose 1HN04CH-TL-W by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with 1HN04CH-TL-W inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 8Ohm @ 140mA, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-CPH
- Package / Case: TO-236-3, SC-59, SOT-23-3
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