1N1200A
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE GEN PURP 100V 12A DO4
$6.96
Available to order
Reference Price (USD)
1+
$6.62000
10+
$5.95800
100+
$4.89870
500+
$4.10428
1,000+
$3.70709
Exquisite packaging
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Revolutionize your power electronics with GeneSiC Semiconductor's 1N1200A Single Rectifier Diodes, offering exceptional performance and reliability. These diodes are ideal for high-frequency and high-voltage applications, including telecommunications and medical devices. With advanced features like low forward drop and high temperature operation, they set the benchmark for quality. GeneSiC Semiconductor provides solutions you can trust. Get started by sending us your requirements!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -65°C ~ 200°C
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