1N4448TAP
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA DO35
$0.16
Available to order
Reference Price (USD)
10,000+
$0.02000
30,000+
$0.01800
50,000+
$0.01600
100,000+
$0.01500
250,000+
$0.01400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Achieve superior power conversion with 1N4448TAP Single Rectifier Diodes from Vishay General Semiconductor - Diodes Division. These diodes are designed for high-performance applications, offering low forward voltage and high reverse voltage capabilities. Perfect for industrial automation, consumer electronics, and energy-efficient systems, they ensure reliable operation under varying loads. Key benefits include extended lifespan, minimal power dissipation, and compact design. Elevate your projects with Vishay General Semiconductor - Diodes Division's cutting-edge technology. Contact us for more information!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75 V
- Current - Average Rectified (Io): 150mA
- Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 8 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 75 V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35 (DO-204AH)
- Operating Temperature - Junction: 175°C (Max)
Related Products
Taiwan Semiconductor Corporation
F1T6GH
Nexperia USA Inc.
BAS70W,115
Infineon Technologies
IDWD15G120C5XKSA1
Vishay General Semiconductor - Diodes Division
MB10H100HE3_B/I
Microchip Technology
JANTXV1N6626/TR
NTE Electronics, Inc
1N4005
Microchip Technology
1N6640US
UnitedSiC
UJ3D1220K2
Vishay General Semiconductor - Diodes Division
VS-HFA08SD60STR-M3
Comchip Technology