Shopping cart

Subtotal: $0.00

1N5625-TR

Vishay General Semiconductor - Diodes Division
1N5625-TR Preview
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 400V 3A SOD64
$1.05
Available to order
Reference Price (USD)
2,500+
$0.34800
5,000+
$0.33600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3 µs
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -55°C ~ 175°C

Related Products

Vishay General Semiconductor - Diodes Division

V3P6-M3/84A

Microchip Technology

JAN1N5551/TR

Vishay General Semiconductor - Diodes Division

BYT52M-TAP

Vishay General Semiconductor - Diodes Division

SS2H9-M3/52T

Vishay General Semiconductor - Diodes Division

SD103CWS-HG3-18

Comchip Technology

CDBB140-HF

Vishay General Semiconductor - Diodes Division

BYS10-45-M3/TR

Panjit International Inc.

FR1A_R1_00001

Comchip Technology

CURB204-G

Top