2731-200P
Microsemi Corporation
Microsemi Corporation
RF TRANS 3.1GHZ MODULE
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Upgrade your RF designs with Microsemi Corporation's 2731-200P Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how 2731-200P can enhance your projects!
Specifications
- Product Status: Obsolete
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: 2.7GHz ~ 3.1GHz
- Noise Figure (dB Typ @ f): -
- Gain: 8.7dB
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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