2N7000-G
Microchip Technology
Microchip Technology
MOSFET N-CH 60V 200MA TO92-3
$0.52
Available to order
Reference Price (USD)
1+
$0.38000
25+
$0.31920
100+
$0.28840
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with 2N7000-G, a reliable Transistors - FETs, MOSFETs - Single by Microchip Technology. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, 2N7000-G meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Related Products
Infineon Technologies
IRLS3034TRL7PP
STMicroelectronics
STU9N65M2
Micro Commercial Co
MCG30N03A-TP
IXYS
MMIX1F44N100Q3
IXYS
IXFA36N20X3
Rohm Semiconductor
R6024KNJTL
onsemi
NTMFS4D2N10MDT1G
Texas Instruments
TPS1100PW
Vishay Siliconix
IRF624PBF
Toshiba Semiconductor and Storage