TK10A80E,S4X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 800V 10A TO220SIS
$2.53
Available to order
Reference Price (USD)
1+
$2.42000
50+
$1.95000
100+
$1.75500
500+
$1.36500
1,000+
$1.13100
2,500+
$1.09200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with TK10A80E,S4X, a reliable Transistors - FETs, MOSFETs - Single by Toshiba Semiconductor and Storage. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, TK10A80E,S4X meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
Related Products
Microchip Technology
MSC015SMA070B
STMicroelectronics
STWA20N95DK5
IXYS
IXTP64N10L2
Infineon Technologies
IPU50R3K0CEBKMA1
STMicroelectronics
STB6NK60Z-1
Infineon Technologies
IPP50R140CPXKSA1
onsemi
NTMYS7D3N04CLTWG
onsemi
CPH6311-TL-E
Taiwan Semiconductor Corporation
TSM680P06CH X0G
onsemi