2SA1955FVBTPL3Z
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PNP 12V 0.4A VESM
$0.12
Available to order
Reference Price (USD)
8,000+
$0.06757
Exquisite packaging
Discount
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Choose 2SA1955FVBTPL3Z by Toshiba Semiconductor and Storage for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, 2SA1955FVBTPL3Z is a versatile solution. Ready to order? Submit your inquiry today and let Toshiba Semiconductor and Storage provide the components you need.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 400 mA
- Voltage - Collector Emitter Breakdown (Max): 12 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
- Power - Max: 100 mW
- Frequency - Transition: 130MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
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