2SA1978-T1B-A
Renesas Electronics America Inc
Renesas Electronics America Inc
PNP TRANSISTOR
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Engineered for excellence, Renesas Electronics America Inc's 2SA1978-T1B-A transistors redefine RF performance in the Bipolar (BJT) category. Ideal for VHF/UHF systems, these devices provide exceptional gain-bandwidth product and phase stability. Applications span from broadcast transmitters to automotive radar. Partner with us for quality components contact our sales team for personalized assistance!
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 5.5GHz
- Noise Figure (dB Typ @ f): 2dB @ 1GHz
- Gain: 10dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15mA, 10V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT23-3 (TO-236)
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