2SC2714-O(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
RF TRANS NPN 30V 550MHZ SMINI
$0.10
Available to order
Reference Price (USD)
3,000+
$0.05980
6,000+
$0.05200
15,000+
$0.04420
30,000+
$0.04160
75,000+
$0.03900
150,000+
$0.03380
Exquisite packaging
Discount
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Designed for the future, Toshiba Semiconductor and Storage's 2SC2714-O(TE85L,F) RF BJT transistors deliver cutting-edge technology in a proven package. Features include gold metallization for reliable contacts and TO-39 enclosures for durability. Perfect for phased-array antennas and microwave links. Your innovation starts here reach out for expert consultation today!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 30V
- Frequency - Transition: 550MHz
- Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
- Gain: 23dB
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
- Current - Collector (Ic) (Max): 20mA
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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