2SC2714-Y(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
RF TRANS NPN 30V 550MHZ SMINI
$0.46
Available to order
Reference Price (USD)
3,000+
$0.08400
6,000+
$0.07560
15,000+
$0.06720
30,000+
$0.06300
75,000+
$0.05600
Exquisite packaging
Discount
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Upgrade your RF designs with Toshiba Semiconductor and Storage's 2SC2714-Y(TE85L,F) Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how 2SC2714-Y(TE85L,F) can enhance your projects!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 30V
- Frequency - Transition: 550MHz
- Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
- Gain: 23dB
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
- Current - Collector (Ic) (Max): 20mA
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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