2SC5415AE-TD-E
onsemi
onsemi
RF TRANS NPN 12V 6.7GHZ PCP
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Maximize signal clarity with 2SC5415AE-TD-E RF BJT transistors by onsemi. Featuring low distortion and high linearity, these components are perfect for high-sensitivity applications like medical imaging equipment and military communications. Their compact design allows for easy integration without compromising performance. Don t miss out inquire now for bulk discounts and technical specifications!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 6.7GHz
- Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
- Gain: 9dB
- Power - Max: 800mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PCP
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