MRF581AG
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 15V 5GHZ MACRO X
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Upgrade your RF designs with Microsemi Corporation's MRF581AG Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how MRF581AG can enhance your projects!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 5GHz
- Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
- Gain: 13dB ~ 15.5dB
- Power - Max: 1.25W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
- Current - Collector (Ic) (Max): 200mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Macro-X
- Supplier Device Package: Macro-X
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