2SC5750-T1-A
Renesas Electronics America Inc
Renesas Electronics America Inc
SMALL SIGNAL BIPOLAR TRANSISTOR
$0.29
Available to order
Reference Price (USD)
1+
$0.29000
500+
$0.2871
1000+
$0.2842
1500+
$0.2813
2000+
$0.2784
2500+
$0.2755
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Renesas Electronics America Inc's 2SC5750-T1-A RF BJT transistors offer unmatched reliability for critical communication systems. With optimized noise figures and power handling, they excel in cellular base stations, satellite receivers, and IoT devices. Their robust construction ensures longevity even in harsh environments. Ready to integrate top-tier components? Request a quote today and let us support your RF engineering goals!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 6V
- Frequency - Transition: 15GHz
- Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
- Gain: 15dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: SOT-343
Related Products
Infineon Technologies
BFP640FH6327XTSA1
Infineon Technologies
BFP760H6327XTSA1
onsemi
MCH4020-TL-H
Infineon Technologies
BFP740FH6327XTSA1
Infineon Technologies
BFP420H6433XTMA1
Infineon Technologies
BF771E6327HTSA1
Infineon Technologies
BFP650H6327XTSA1
NXP USA Inc.
BFU550R
CEL
UPA800T-T1
Diodes Incorporated