2SJ243-T1-A
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET P-CH 30V 100MA SC75-3 USM
$0.26
Available to order
Reference Price (USD)
1+
$0.26000
500+
$0.2574
1000+
$0.2548
1500+
$0.2522
2000+
$0.2496
2500+
$0.247
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
2SJ243-T1-A by Renesas Electronics America Inc is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, 2SJ243-T1-A ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 25Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id: 2.3V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 16 pF @ 5 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: SC-75-3, USM
- Package / Case: SC-75, SOT-416
Related Products
onsemi
NVMFS5C426NLWFT1G
Rohm Semiconductor
QS5U23TR
Torex Semiconductor Ltd
XP161A1265PR
Infineon Technologies
BSC050N03LSGATMA1
Diodes Incorporated
DMN15H310SE-13
onsemi
NVGS5120PT1G
Vishay Siliconix
SIUD401ED-T1-GE3
Vishay Siliconix
SIA436DJ-T1-GE3
IXYS
IXFT30N85XHV
Infineon Technologies