2SK3479-Z-E1-AZ
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 100V 83A TO-263
$2.03
Available to order
Reference Price (USD)
1+
$2.02659
500+
$2.0063241
1000+
$1.9860582
1500+
$1.9657923
2000+
$1.9455264
2500+
$1.9252605
Exquisite packaging
Discount
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Discover 2SK3479-Z-E1-AZ, a versatile Transistors - FETs, MOSFETs - Single solution from Renesas Electronics America Inc, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 11mOhm @ 42A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 125W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263, TO-220SMD
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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