2SK879-Y(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
JFET N-CH 0.1W USM
$0.44
Available to order
Reference Price (USD)
3,000+
$0.14105
6,000+
$0.13195
15,000+
$0.12740
Exquisite packaging
Discount
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Engineers trust Toshiba Semiconductor and Storage's 2SK879-Y(TE85L,F) JFET transistors for critical amplification stages requiring exceptional dynamic range. The proprietary fabrication process delivers tight IDSS matching between units, simplifying parallel configurations in mixer consoles and transducer interfaces. With TO-92 and SMD packaging options available, these components adapt to space-constrained PCB layouts. Visit our product page for application notes or contact sales to discuss volume discounts on these industry-standard semiconductors.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
- Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 100 mW
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
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