A2V07H400-04NR3
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
$171.83
Available to order
Reference Price (USD)
250+
$104.10576
Exquisite packaging
Discount
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Unlock next-gen RF performance with A2V07H400-04NR3 from NXP USA Inc.. These MOSFETs feature innovative gallium nitride (GaN) technology for higher efficiency in compact form factors, revolutionizing telecom infrastructure and defense electronics. Their lead-free compliance meets global environmental standards. Let s discuss your application needs contact our sales team now!
Specifications
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 595MHz ~ 851MHz
- Gain: 19.9dB
- Voltage - Test: 48 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 700 mA
- Power - Output: 267W
- Voltage - Rated: 105 V
- Package / Case: OM-780G-4L
- Supplier Device Package: OM-780G-4L
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