A2V09H300-04NR3
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
$131.05
Available to order
Reference Price (USD)
250+
$95.71012
Exquisite packaging
Discount
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The A2V09H300-04NR3 by NXP USA Inc. redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 720MHz ~ 960MHz
- Gain: 19.7dB
- Voltage - Test: 48 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 400 mA
- Power - Output: 53dBm
- Voltage - Rated: 105 V
- Package / Case: OM-780G-4L
- Supplier Device Package: OM-780G-4L
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