AFT09MS007NT1
NXP USA Inc.
NXP USA Inc.
FET RF 30V 870MHZ PLD1.5W
$4.58
Available to order
Reference Price (USD)
1,000+
$2.10140
2,000+
$1.99633
Exquisite packaging
Discount
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Unlock next-gen RF performance with AFT09MS007NT1 from NXP USA Inc.. These MOSFETs feature innovative gallium nitride (GaN) technology for higher efficiency in compact form factors, revolutionizing telecom infrastructure and defense electronics. Their lead-free compliance meets global environmental standards. Let s discuss your application needs contact our sales team now!
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 870MHz
- Gain: 15.2dB
- Voltage - Test: 7.5 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 7.3W
- Voltage - Rated: 30 V
- Package / Case: PLD-1.5W
- Supplier Device Package: PLD-1.5W
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