AIKB30N65DF5ATMA1
Infineon Technologies
Infineon Technologies
IC DISCRETE 650V TO263-3
$5.33
Available to order
Reference Price (USD)
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$5.33000
500+
$5.2767
1000+
$5.2234
1500+
$5.1701
2000+
$5.1168
2500+
$5.0635
Exquisite packaging
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Maximize energy efficiency with AIKB30N65DF5ATMA1 Single IGBTs by Infineon Technologies, a trusted name in discrete semiconductors. Suitable for solar inverters, motor controllers, and more, these transistors feature low conduction loss and high switching frequency. Their robust design ensures long-term performance even in harsh environments. Choose AIKB30N65DF5ATMA1 for your next project and experience the Infineon Technologies difference. Submit your inquiry today for expert assistance!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 55 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
- Power - Max: 188 W
- Switching Energy: 330µJ (on), 100µJ (off)
- Input Type: Standard
- Gate Charge: 70 nC
- Td (on/off) @ 25°C: 25ns/188ns
- Test Condition: 400V, 15A, 23Ohm, 15V
- Reverse Recovery Time (trr): 67 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3
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