APT29F100B2
Microchip Technology
Microchip Technology
MOSFET N-CH 1000V 30A T-MAX
$19.70
Available to order
Reference Price (USD)
1+
$20.15000
10+
$18.31900
100+
$15.57130
500+
$13.28142
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose APT29F100B2 by Microchip Technology. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with APT29F100B2 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 440mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1040W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: T-MAX™ [B2]
- Package / Case: TO-247-3 Variant
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