APT8024B2LLG
Microsemi Corporation
Microsemi Corporation
MOSFET N-CH 800V 31A T-MAX
$26.66
Available to order
Reference Price (USD)
1+
$25.62000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover APT8024B2LLG, a versatile Transistors - FETs, MOSFETs - Single solution from Microsemi Corporation, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 240mOhm @ 15.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 565W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: T-MAX™ [B2]
- Package / Case: TO-247-3 Variant
Related Products
Vishay Siliconix
SIA414DJ-T1-GE3
Infineon Technologies
IRFB4019PBF
Infineon Technologies
IPD11DP10NMATMA1
STMicroelectronics
STF35N65M5
Alpha & Omega Semiconductor Inc.
AOD2810
Toshiba Semiconductor and Storage
TPH3R203NL,L1Q
Vishay Siliconix
SQJ479EP-T1_GE3
Diodes Incorporated
DMP45H4D9HK3-13
STMicroelectronics
STW50N65DM2AG
Panjit International Inc.