APTM120DA30CT1G
Microchip Technology
Microchip Technology
MOSFET N-CH 1200V 31A SP1
$84.28
Available to order
Reference Price (USD)
1+
$84.28083
500+
$83.4380217
1000+
$82.5952134
1500+
$81.7524051
2000+
$80.9095968
2500+
$80.0667885
Exquisite packaging
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Boost your electronic applications with APTM120DA30CT1G, a reliable Transistors - FETs, MOSFETs - Single by Microchip Technology. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, APTM120DA30CT1G meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 360mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 657W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP1
- Package / Case: SP1
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