BB804SF2E6327
Infineon Technologies
Infineon Technologies
VARIABLE CAPACITANCE DIODE
$0.04
Available to order
Reference Price (USD)
1+
$0.04000
500+
$0.0396
1000+
$0.0392
1500+
$0.0388
2000+
$0.0384
2500+
$0.038
Exquisite packaging
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The BB804SF2E6327 from Infineon Technologies sets new benchmarks in varicap diode efficiency, featuring patented junction designs for ultra-low distortion in high-power RF amplifiers. Applications span from amateur radio to quantum computing peripherals, backed by Infineon Technologies's ISO 9001-certified production. We provide cross-reference assistance and counterfeit protection guarantees. Your innovation deserves authentic components submit your inquiry before midnight for same-day response!
Specifications
- Product Status: Active
- Capacitance @ Vr, F: 47.5pF @ 2V, 1MHz
- Capacitance Ratio: 1.71
- Capacitance Ratio Condition: C2/C8
- Voltage - Peak Reverse (Max): 18 V
- Diode Type: 1 Pair Common Cathode
- Q @ Vr, F: 200 @ 2V, 100MHz
- Operating Temperature: -55°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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Infineon Technologies