BC847BQCZ
Nexperia USA Inc.

Nexperia USA Inc.
TRANS 45V 0.1A DFN1412D-3
$0.25
Available to order
Reference Price (USD)
1+
$0.25000
500+
$0.2475
1000+
$0.245
1500+
$0.2425
2000+
$0.24
2500+
$0.2375
Exquisite packaging
Discount
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Choose BC847BQCZ by Nexperia USA Inc. for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, BC847BQCZ is a versatile solution. Ready to order? Submit your inquiry today and let Nexperia USA Inc. provide the components you need.
Specifications
- Product Status: Obsolete
- Transistor Type: -
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 360 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1412D-3