BCR10PNH6727XTSA1
Infineon Technologies
Infineon Technologies
TRANS NPN/PNP PREBIAS SOT363
$0.06
Available to order
Reference Price (USD)
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$0.06000
500+
$0.0594
1000+
$0.0588
1500+
$0.0582
2000+
$0.0576
2500+
$0.057
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Introducing Infineon Technologies's BCR10PNH6727XTSA1 advanced Pre-Biased Transistor Arrays engineered for modern electronics. These BJT arrays provide ready-to-use solutions with internal resistor networks, significantly reducing design complexity and BOM costs. Application highlights include power supply circuits, display drivers, and microcontroller interfaces in automotive, aerospace, and industrial environments. Technical features comprise low VCE(sat), tight current gain matching, and RoHS compliance for environmental safety. Infineon Technologies stands behind every BCR10PNH6727XTSA1 unit with rigorous quality testing. Streamline your procurement process contact our sales team via the inquiry form for personalized assistance!
Specifications
- Product Status: Not For New Designs
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 130MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
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