BCR133SH6433XTMA1
Infineon Technologies
Infineon Technologies
TRANS 2NPN PREBIAS 0.25W SOT363
$0.10
Available to order
Reference Price (USD)
1+
$0.09520
500+
$0.094248
1000+
$0.093296
1500+
$0.092344
2000+
$0.091392
2500+
$0.09044
Exquisite packaging
Discount
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Select Infineon Technologies's BCR133SH6433XTMA1 for superior Pre-Biased Transistor Array performance in demanding electronic environments. These BJT arrays deliver time-saving solutions with their integrated resistor networks and matched transistor characteristics. Ideal for audio amplifiers, level shifters, and digital logic interfaces in commercial and industrial equipment. Performance highlights include wide operating voltage ranges, excellent linearity, and resistance to thermal runaway. As a trusted semiconductor supplier, Infineon Technologies offers flexible packaging options and reliable delivery schedules. Whether you need samples or production quantities, begin by submitting your BCR133SH6433XTMA1 inquiry our team awaits your requirements!
Specifications
- Product Status: Not For New Designs
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 130MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
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