BCR185E6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS PREBIAS PNP 0.2W SOT23-3
$0.02
Available to order
Reference Price (USD)
36,000+
$0.02824
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your circuits with the BCR185E6327HTSA1 from Infineon Technologies, a leader in Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single, Pre-Biased deliver unmatched performance and durability. Features include high current capacity, minimal leakage, and robust packaging. Ideal for use in IoT devices, robotics, and power supplies. Infineon Technologies provides reliable and innovative solutions. Inquire today for more details or to place an order!
Specifications
- Product Status: Not For New Designs
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
Related Products
Diodes Incorporated
ADTC114YUAQ-7
Diodes Incorporated
DDTA123TUA-7-F
Toshiba Semiconductor and Storage
RN1113ACT(TPL3)
Fairchild Semiconductor
FJV3113RMTF
onsemi
MMUN2134LT1G
Toshiba Semiconductor and Storage
RN1106,LF(CT
Infineon Technologies
BCR135E6433HTMA1
Fairchild Semiconductor
FJV4102RMTF
Rohm Semiconductor
DTC015TUBTL
Nexperia USA Inc.