BCR198E6433HTMA1
Infineon Technologies
Infineon Technologies
TRANS PREBIAS PNP 200MW SOT23-3
$0.05
Available to order
Reference Price (USD)
1+
$0.04680
500+
$0.046332
1000+
$0.045864
1500+
$0.045396
2000+
$0.044928
2500+
$0.04446
Exquisite packaging
Discount
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Optimize your circuits with the BCR198E6433HTMA1 from Infineon Technologies, a leader in Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single, Pre-Biased deliver unmatched performance and durability. Features include high current capacity, minimal leakage, and robust packaging. Ideal for use in IoT devices, robotics, and power supplies. Infineon Technologies provides reliable and innovative solutions. Inquire today for more details or to place an order!
Specifications
- Product Status: Not For New Designs
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 47 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 190 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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