BCV62AE6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS 2PNP 30V 0.1A SOT143
$0.43
Available to order
Reference Price (USD)
3,000+
$0.09053
6,000+
$0.08550
15,000+
$0.07796
30,000+
$0.07293
75,000+
$0.06706
Exquisite packaging
Discount
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Achieve peak performance with Infineon Technologies's BCV62AE6327HTSA1 BJT Arrays, crafted for precision and durability. These arrays feature high-speed operation, low thermal resistance, and excellent matching properties, ensuring consistent results in critical applications. Commonly utilized in data acquisition, telecommunications, and energy management systems. Contact us today to discuss your project requirements and discover how we can help you succeed!
Specifications
- Product Status: Not For New Designs
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
- Power - Max: 300mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: PG-SOT-143-3D
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