BF776H6327
Infineon Technologies
Infineon Technologies
RF TRANSISTOR, NPN
$0.16
Available to order
Reference Price (USD)
1+
$0.16000
500+
$0.1584
1000+
$0.1568
1500+
$0.1552
2000+
$0.1536
2500+
$0.152
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, Infineon Technologies's BF776H6327 transistors redefine RF performance in the Bipolar (BJT) category. Ideal for VHF/UHF systems, these devices provide exceptional gain-bandwidth product and phase stability. Applications span from broadcast transmitters to automotive radar. Partner with us for quality components contact our sales team for personalized assistance!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 4.7V
- Frequency - Transition: 46GHz
- Noise Figure (dB Typ @ f): 0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz
- Gain: 24dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 30mA, 3V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4
Related Products
Infineon Technologies
BFR340L3E6327XTMA1
Infineon Technologies
BF771E6765N
NXP USA Inc.
BFR106,215
Fairchild Semiconductor
KSC1674YBU
Toshiba Semiconductor and Storage
MT3S113P(TE12L,F)
onsemi
NSVF2250WT1G
NTE Electronics, Inc
NTE346
Analog Devices Inc./Maxim Integrated
MAX2602ESA+
Toshiba Semiconductor and Storage
2SC5087R(TE85L,F)
Infineon Technologies