BFG10,215
NXP USA Inc.
NXP USA Inc.
RF TRANS NPN 8V 1.9GHZ SOT143B
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Designed for the future, NXP USA Inc.'s BFG10,215 RF BJT transistors deliver cutting-edge technology in a proven package. Features include gold metallization for reliable contacts and TO-39 enclosures for durability. Perfect for phased-array antennas and microwave links. Your innovation starts here reach out for expert consultation today!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 8V
- Frequency - Transition: 1.9GHz
- Noise Figure (dB Typ @ f): -
- Gain: 7dB
- Power - Max: 400mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
- Current - Collector (Ic) (Max): 250mA
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143B
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