BFP183WH6327
Infineon Technologies
Infineon Technologies
RF TRANSISTOR, L BAND, NPN
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Achieve peak RF performance with BFP183WH6327 transistors by Infineon Technologies. These BJT components combine high breakdown voltage with superior thermal management, catering to power amplifier stages and frequency multipliers. Trusted in defense and commercial sectors alike. Take the next step inquire about customization options and lead times!
Specifications
- Product Status: Active
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Microsemi Corporation
JANTXV2N4957
NXP USA Inc.
BFU725F,115
Central Semiconductor Corp
2N5109 PBFREE
Broadcom Limited
AT-31033-BLKG
Fairchild Semiconductor
KSC1393OTA
NXP USA Inc.
BFG424F,115
Toshiba Semiconductor and Storage
MT3S20TU(TE85L)
STMicroelectronics
START499ETR
Ampleon USA Inc.
BLS3135-65I
Broadcom Limited