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BFG25AW/X,115

NXP USA Inc.
BFG25AW/X,115 Preview
NXP USA Inc.
RF TRANS NPN 5V 5GHZ 4SO
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Specifications

  • Product Status: Obsolete
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 1.9dB ~ 2dB @ 1GHz
  • Gain: -
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V
  • Current - Collector (Ic) (Max): 6.5mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343 Reverse Pinning
  • Supplier Device Package: 4-SO

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