BFP 181 E7764
Infineon Technologies
Infineon Technologies
RF TRANSISTOR, L BAND, NPN
$0.06
Available to order
Reference Price (USD)
1+
$0.06000
500+
$0.0594
1000+
$0.0588
1500+
$0.0582
2000+
$0.0576
2500+
$0.057
Exquisite packaging
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Infineon Technologies's BFP 181 E7764 RF BJT transistors offer unmatched reliability for critical communication systems. With optimized noise figures and power handling, they excel in cellular base stations, satellite receivers, and IoT devices. Their robust construction ensures longevity even in harsh environments. Ready to integrate top-tier components? Request a quote today and let us support your RF engineering goals!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
- Gain: 17.5dB ~ 21dB
- Power - Max: 175mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
- Current - Collector (Ic) (Max): 20mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: PG-SOT-143-3D
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