BFP 520F E6327
Infineon Technologies
Infineon Technologies
RF TRANS NPN 3.5V 45GHZ 4TSFP
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Designed for the future, Infineon Technologies's BFP 520F E6327 RF BJT transistors deliver cutting-edge technology in a proven package. Features include gold metallization for reliable contacts and TO-39 enclosures for durability. Perfect for phased-array antennas and microwave links. Your innovation starts here reach out for expert consultation today!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 3.5V
- Frequency - Transition: 45GHz
- Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
- Gain: 22.5dB
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
- Current - Collector (Ic) (Max): 40mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: 4-TSFP
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