BFP 640FESD E6327
Infineon Technologies
Infineon Technologies
RF TRANS NPN 4.7V 46GHZ 4TSFP
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Upgrade your RF designs with Infineon Technologies's BFP 640FESD E6327 Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how BFP 640FESD E6327 can enhance your projects!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 4.7V
- Frequency - Transition: 46GHz
- Noise Figure (dB Typ @ f): 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz
- Gain: 8B ~ 30.5dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: 4-TSFP
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