BFP182WE6327HTSA1
Infineon Technologies
Infineon Technologies
RF TRANS NPN 12V 8GHZ SOT343-4
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Infineon Technologies's BFP182WE6327HTSA1 RF BJT transistors offer unmatched reliability for critical communication systems. With optimized noise figures and power handling, they excel in cellular base stations, satellite receivers, and IoT devices. Their robust construction ensures longevity even in harsh environments. Ready to integrate top-tier components? Request a quote today and let us support your RF engineering goals!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
- Gain: 22dB
- Power - Max: 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-3D
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