BFP640ESDH6327XTSA1
Infineon Technologies
Infineon Technologies
RF TRANS NPN 4.7V 46GHZ SOT343
$0.74
Available to order
Reference Price (USD)
3,000+
$0.22829
6,000+
$0.21517
15,000+
$0.20205
30,000+
$0.19286
Exquisite packaging
Discount
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Discover high-performance BFP640ESDH6327XTSA1 RF Bipolar Transistors from Infineon Technologies, designed for superior signal amplification in demanding applications. These transistors feature excellent high-frequency response, low noise, and reliable performance, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless devices, our BJT-RF transistors ensure stable operation under varying conditions. Contact us today for pricing and availability let our experts help you find the perfect solution for your RF needs!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 4.7V
- Frequency - Transition: 46GHz
- Noise Figure (dB Typ @ f): 0.6dB ~ 2dB @ 150MHz ~ 10GHz
- Gain: 7dB ~ 30dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4-2
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