BFR182E-6327
Infineon Technologies
Infineon Technologies
RF N-CHANNEL MOSFET
$0.09
Available to order
Reference Price (USD)
1+
$0.09000
500+
$0.0891
1000+
$0.0882
1500+
$0.0873
2000+
$0.0864
2500+
$0.0855
Exquisite packaging
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Simplify your RF design challenges with BFR182E-6327 from Infineon Technologies. These BJT transistors offer consistent hFE matching and low saturation voltage, essential for push-pull configurations and mixer circuits. Serving industries from marine navigation to renewable energy. Connect with our team we provide end-to-end support from selection to delivery!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 1.3dB @ 1.8GHz
- Gain: 9.5dB
- Power - Max: 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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