HFA3127MJ/883
Harris Corporation
Harris Corporation
DUAL MARKED (5962-9474901MEA)
$24.66
Available to order
Reference Price (USD)
1+
$24.66000
500+
$24.4134
1000+
$24.1668
1500+
$23.9202
2000+
$23.6736
2500+
$23.427
Exquisite packaging
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Harris Corporation presents HFA3127MJ/883: The go-to RF BJT transistor for low-power, high-frequency designs. Its standout features like controlled beta variation and hermetic packaging make it a favorite among telecom engineers. From RFID readers to test equipment, versatility meets precision. Get started request samples or datasheets via our quick-response form!
Specifications
- Product Status: Active
- Transistor Type: 5 NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
- Gain: -
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
- Current - Collector (Ic) (Max): 65mA
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 16-CDIP (0.300", 7.62mm)
- Supplier Device Package: 16-CERDIP
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