BFR30,215
NXP USA Inc.
NXP USA Inc.
JFET N-CH 10MA 250MW SOT23
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Upgrade your electronics with NXP USA Inc.'s BFR30,215 JFET transistors, the go-to choice for designers seeking stable performance in switching and amplification circuits. Key features include ultra-low leakage current, high input impedance, and consistent pinch-off voltage characteristics. Commonly used in analog switches, sensor interfaces, and medical equipment, these discrete semiconductors ensure signal integrity. Get a quote now for bulk purchases or technical support let us help you select the perfect JFET solution for your application.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 25 V
- Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 10 V
- Current Drain (Id) - Max: 10 mA
- Voltage - Cutoff (VGS off) @ Id: 5 V @ 0.5 nA
- Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 250 mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
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