J271
onsemi
onsemi
JFET P-CH 30V 0.35W TO92
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Achieve new performance benchmarks with onsemi's J271 JFET transistors, specifically engineered for phase-sensitive detection circuits. The unique triple-diffused structure minimizes 1/f noise while delivering 0.1dB gain flatness across bandwidths to 100MHz. Medical imaging systems and lock-in amplifiers benefit from these precision characteristics. Check stock availability through our real-time inventory system or ask about custom testing protocols for mission-critical deployments.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: 350 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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