BFR31,215
NXP USA Inc.
NXP USA Inc.
JFET N-CH 10MA 250MW SOT23
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For designers requiring robust EMC performance, NXP USA Inc.'s BFR31,215 JFET transistors incorporate advanced shielding against RF interference without compromising transconductance. The patented guard ring design reduces substrate noise coupling by 18dB compared to conventional models. Ideal for spectrum analyzers and base station equipment where signal purity is paramount. Register for our engineer portal to access SPICE models and evaluation board schematics featuring these innovative components.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 25 V
- Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 10 V
- Current Drain (Id) - Max: 10 mA
- Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 0.5 nA
- Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 250 mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
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