PMBFJ177,215
NXP USA Inc.
NXP USA Inc.
JFET P-CH 30V 0.3W SOT23
$0.00
Available to order
Reference Price (USD)
3,000+
$0.16568
6,000+
$0.15696
15,000+
$0.14824
30,000+
$0.14388
Exquisite packaging
Discount
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Discover high-performance PMBFJ177,215 JFET transistors from NXP USA Inc., designed for precision signal processing and low-noise applications. These transistors feature excellent gain consistency, low input capacitance, and superior thermal stability, making them ideal for audio amplifiers, instrumentation circuits, and RF designs. Whether you're developing professional audio equipment or sensitive measurement devices, NXP USA Inc.'s JFETs deliver reliable performance. Contact us today for datasheets and pricing our team is ready to assist with your project requirements.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): 30 V
- Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
- Resistance - RDS(On): 300 Ohms
- Power - Max: 300 mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
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