BFR840L3RHESDE6327XTSA1
Infineon Technologies

Infineon Technologies
RF TRANS NPN 2.6V 75GHZ TSLP-3
$0.71
Available to order
Reference Price (USD)
15,000+
$0.19764
30,000+
$0.18739
Exquisite packaging
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Discover high-performance BFR840L3RHESDE6327XTSA1 RF Bipolar Transistors from Infineon Technologies, designed for superior signal amplification in demanding applications. These transistors feature excellent high-frequency response, low noise, and reliable performance, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless devices, our BJT-RF transistors ensure stable operation under varying conditions. Contact us today for pricing and availability let our experts help you find the perfect solution for your RF needs!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 2.6V
- Frequency - Transition: 75GHz
- Noise Figure (dB Typ @ f): 0.5dB @ 450MHz
- Gain: 27dB
- Power - Max: 75mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: PG-TSLP-3